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RB751VM-40FH - Schottky Barrier Diode

Key Features

  • small mold type. (UMD2) 2) Low IR 3) High reliability.
  • Construction Silicon epitaxial planar UMD2.
  • Structure 0.3±0.05 0.7±0.2     0.1 ROHM : UMD2 JEITA : SC-90/A JEDEC :SOD-323 dot (year week factory).
  • Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ11.5.555±0.00.505 Cathode Anode 0.3±0.1 3.5±0.05 1.75±0.1 2.75 8.0±0.2 2.8±0.1 1.40±0.1 4.0±0.1 φ11..05.
  • Absolute maximum ratings (Ta= 25°C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) A.

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Datasheet Details

Part number RB751VM-40FH
Manufacturer ROHM
File Size 634.55 KB
Description Schottky Barrier Diode
Datasheet download datasheet RB751VM-40FH Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diode RB751VM-40FH Application High speed switching Dimensions (Unit : mm) 1.25±0.1 0.1±0.1     0.05 Datasheet AEC-Q101 Qualified Land size figure (Unit : mm) 0.9M IN . 1 .7 ± 0 .1 2 .5 ± 0 .2 0.8MIN. 2.1 Features 1) Ultra small mold type. (UMD2) 2) Low IR 3) High reliability Construction Silicon epitaxial planar UMD2 Structure 0.3±0.05 0.7±0.2     0.1 ROHM : UMD2 JEITA : SC-90/A JEDEC :SOD-323 dot (year week factory) Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ11.5.555±0.00.505 Cathode Anode 0.3±0.1 3.5±0.05 1.75±0.1 2.75 8.0±0.2 2.8±0.1 1.40±0.1 4.0±0.1 φ11..