Click to expand full text
Data Sheet
Schottky Barrier Diode
RBQ10NS65A
lApplications General rectification lDimensions(Unit : mm) lLand size figure (Unit : mm)
lGeneral rectification 1)Cathode Common Dual type.(LPDS) 2)Low IR.
BQ10NS 65A ①
lConstruction Silicon epitaxial planer
ROHM : LPDS JEITA : TO263S ① Manufacture Year, Week and Day
lStructure
①
lTaping dimensions(Unit : mm)
② ③
www.DataSheet.co.kr
●Absolute maximum ratings(Tc=25°C) Parameter Limits Symbol VRM Reverse voltage (repetitive) 65 VR Reverse voltage (DC) 65 Average rectified forward current (*1) 10 Io IFSM Forward current surge peak (60Hz1cyc)(*2) 50 Junction temperature 150 Tj Storage temperature -40 to +150 Tstg (*1) 60Hz half sin wave, 1/2 Io per diode. (*2) 60Hz half sin wave, one cycle, non-repetitive at Tj=25 °C.