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RBQ10NS65A - Schottky Barrier Diode

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Part number RBQ10NS65A
Manufacturer ROHM
File Size 1.42 MB
Description Schottky Barrier Diode
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Data Sheet Schottky Barrier Diode RBQ10NS65A lApplications General rectification lDimensions(Unit : mm) lLand size figure (Unit : mm) lGeneral rectification 1)Cathode Common Dual type.(LPDS) 2)Low IR. BQ10NS 65A ① lConstruction Silicon epitaxial planer ROHM : LPDS JEITA : TO263S ① Manufacture Year, Week and Day lStructure ① lTaping dimensions(Unit : mm) ② ③ www.DataSheet.co.kr ●Absolute maximum ratings(Tc=25°C) Parameter Limits Symbol VRM Reverse voltage (repetitive) 65 VR Reverse voltage (DC) 65 Average rectified forward current (*1) 10 Io IFSM Forward current surge peak (60Hz1cyc)(*2) 50 Junction temperature 150 Tj Storage temperature -40 to +150 Tstg (*1) 60Hz half sin wave, 1/2 Io per diode. (*2) 60Hz half sin wave, one cycle, non-repetitive at Tj=25 °C.
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