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RBQ30T45A Datasheet Schottky Barrier Diode

Manufacturer: ROHM

Overview

Data Sheet Schottky Barrier Diode RBQ30T45A lApplications General rectification     lDimensions (Unit : mm) 4.5±0.3     0.1 10.0±0.3     0.1 2.8±0.2     0.1 lStructure ① 1.3 0.8 (1) (2) (3) 13.5MIN lConstruction Silicon epitaxial planer 1.2 5.0±0.2 8.0±0.2 12.0±0.2 15.0±0.4   0.2 8.0 0.7±0.1 0.

Key Features

  • 1)Cathode common type. 2)Low IR 3)High reliability 2.6±0.5 ROHM : TO220FN ① Manufacture Date www. DataSheet. co. kr lAbsolute maximum ratings (Tc=25C) Parameter Symbol VRM Reverse voltage (repetitive) Reverse voltage (DC) VR Average rectified forward current (.
  • 1) Io IFSM Forward current surge peak (60Hz.
  • 1cyc) Junction temperature Tj Storage temperature (.
  • 1) Rating of per diode : Io/2 Tstg Limits 45 45 30 100 150 -40 to +150 Unit V V A A °C °C lElectrical characteristics (Tj=25°C).