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RBQ30T65A - Schottky Barrier Diode

Features

  • 1) Cathode common type. 2) Low IR 3) High reliability 1 Anode Cathode Anode for d lConstruction de Silicon epitaxial planar 1.2 1.3 0.8 (1) (2) (3) ROHM TO220FN 1 Manufacture Date 0.7±0.1 0.05 2.6±0.5 ommeensigns lAbsolute maximum ratings (Tc= 25°C) D Parameter Symbol Limits Unit c Reverse voltage (repetitive) VRM 65 V e w Reverse voltage (DC) VR 65 V R e Average rectified forward current (.
  • 1) Io 30 A Forward current surge peak (60Hz1cyc) IFSM 100 A t N Junctio.

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Datasheet Details

Part number RBQ30T65A
Manufacturer ROHM
File Size 457.22 KB
Description Schottky Barrier Diode
Datasheet download datasheet RBQ30T65A Datasheet
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Schottky Barrier Diode RBQ30T65A Datasheet lApplication lDimensions (Unit : mm) lStructure General rectification 4.5±0.3 　　　 0.1 10.0±0.3 　　　 0.1 2.8±0.2 　　　 0.1 5.0±0.2 8.0±0.2 12.0±0.2 13.5MIN 15.0±0.4 　 0.2 8.0 lFeatures 1) Cathode common type. 2) Low IR 3) High reliability 1 Anode Cathode Anode for d lConstruction de Silicon epitaxial planar 1.2 1.3 0.8 (1) (2) (3) ROHM TO220FN 1 Manufacture Date 0.7±0.1 0.05 2.6±0.
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