RF101A2S Datasheet | ROHM

.. Diodes Fast recovery diode RF101A2S z Applications General rectification z Dimensions (Unit : mm) CATHODE　BAND (BLUE) φ0.6±0.1 ① ② 7 z Features 1) Cylindrical mold type. (MSR) 2) Ultra Low VF. 3) Ultra high switching. 4) Low switching loss. 5) High ESD. 29±1 3.0±0.2 29±1 φ2.5±0.2 ROHM : MSR ① ② Manufacture Date z Taping specifications (Unit : mm) z Construction Silicon epitaxial planar IVORY H2 BLUE A E H2 記号 Mark Stabdard dimension 寸法規格値(mm) value (mm) T-31 52.4±1.5 Ａ T-32 26.0+0.4 -0 Ｂ 5.0±0.5 Ｃ 0.5ＭＡＸ Ｄ 0 Ｅ 50.4±0.4 Ｆ 0.3ＭＡＸ H1 6.0±0.5 H2 5.0±0.5 L1-L2 0.6ＭＡＸ ＊H1(6mm)：BROWN L1 H1 F L2 H1 D cf : cumulative pitch tolerance w ith 20 pitch than ±1.5mm 注)　累積ピッチの許容差は20ピッチで±1.5mm以下とする z Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current(- 1) Forward current surge peak （60Hz- 1cyc） Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg (- 1)Mounting on epoxi board. 180°Half sine wave z Electrical characteristic (Ta=25°C) Parameter Symbol VF Forward voltage IR Reverse current Reverse recovery time trr Limits 200 200 1 20 150 -55 to +150 Unit V V A A ℃ ℃ Min. - Typ. 0.815 0.01 12 Max. 0.87 10 25 Unit V µA ns Conditions IF=1.0A VR=200V IF=0.5A,IR=1A,Irr=0.25- IR Rev.C 1/3 .. Diodes z Electrical characteristic curves 1 Ta=150℃ 0.1 Ta=125℃ Ta=75℃ 0.01 Ta=25℃ Ta=-25℃ 10000 1000 Ta=75℃ 100 Ta=25℃ 10 1 0.1 0.01 Ta=-25℃ CAPACITANCE BETWEEN TERMINALS:Ct(p F) Ta=150℃ Ta=125℃ 100 f=1MHz f=1MHz REVERSE CURRENT:IR(n A) FORWARD CURRENT:IF(A) 0.001 0 100 200 300 400 500 600 700 800 900 FORWARD VOLTAGE：VF(m V) VF-IF CHARACTERISTICS 50 100 150 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS...