ROHM Semiconductor RF103L2S
Fast recovery Diode
| Part No. | RF103L2S |
|---|---|
| Datasheet | RF103L2S Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Fast recovery Diode |
| Buy | Stock & Price |
APPLICATIONS
High frequency rectification !External dimensions (Unit : mm) !FEATURES
1) Small power mold type (PMDS) 2) Ultra low VF 3) Very fast recovery 4) Low switching loss 1.5±0.2 CATHODE MARK 4.5±0.2 1.2±0.3 1 2 3 4 0.02 0.1 + −0.1 2.6±0.2 2.0±0.2 !Construction Silicon epitaxial planar ∗ 1 , 2●●●Type No. 3 , 4
●●●Manufacturing date EX. RF101L2S EX. 2003,09 → → 6,6 3,9 !Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current ∗ Symbol VRM VR IO IFSM Tj Tstg Limits 200 200 1.0 20 150 −40 to +150 Unit V V A A °C °C Forward Peak surge current (60Hz 1cyc.) Junction temperature Storage temperature ∗ Mounting on glass epoxi board !Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF IR Typ. 0.860 1.2 Max. 0.920 10 Unit V µA IF=1.0A VR=200V IF=0.5A Reverse recovery time trr 9 20 nS IR=1.0A Irr=0.25 IR Conditions 1/2 5.0±0.3 + RF103L2S Diodes !Electrical characteristic curves...
