RT1A050ZP Description
RT1A050ZP Pch -12V -5A Middle Power MOSFET VDSS RDS(on)(Max.) ID PD -12V 26mΩ ±5A 1.25W lFeatures 1) Low on - resistance. 1/11 20150730 - Rev.001 RT1A050ZP lThermal resistance Parameter , junction - ambient Datasheet Symbol RthJA 2 RthJA 3 Values Min.
RT1A050ZP Key Features
- resistance. 2) High power package 3) Low voltage drive(1.5V)