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RT1E050RP - MOSFET

Key Features

  • 1) Low on-resistance. 2) High power package. 3) 4V drive.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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4V Drive Pch MOSFET RT1E050RP  Structure Silicon P-channel MOSFET Features 1) Low on-resistance. 2) High power package. 3) 4V drive.  Application Switching  Dimensions (Unit : mm) TSST8 (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol :UD  Packaging specifications Package Type Code Basic ordering unit (pieces) RT1E050RP Taping TR 3000 ○  Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Continuous Pulsed Continuous Pulsed VDSS VGSS ID IDP *1 IS ISP *1 PD *2 30 20 5 20 1 20 1.25 Channel temperature Tch 150 Range of storage temperature Tstg 55 to +150 *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.