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1.5V Drive Nch MOSFET
RT1C060UN
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
TSST8
(8)
(7)
(6)
(5)
Features 1) Low on-resistance. 2) High power package (TSST8). 3) Low voltage drive (1.5V drive).
(1)
(2)
(3)
(4)
Abbreviated symbol : VB
Application Switching
Packaging specifications Package Code Basic ordering unit (pieces) RT1C060UN Type Taping TR 3000
Inner circuit
(8) (7) (6) (5)
∗2
Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature
*1 Pw10s, Duty cycle1% *2 Each terminal mounted on a ceramic board.