1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible
zConstruction Silicon carbide epitaxial planer type
ROHM : O-220AC 2L
zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Continuous forward current(.
1) Forward current surge peak (60Hz 1cyc) (.
2) Junction temperature Storage temperature (.
1)Tc=120°C max (.
2)PW=8.3ms sinusoidal
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Symbol VRM VR IF IFSM Tj Tstg
Limits 600 600 8.
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SiC Schottky Barrier Diode
SCS108AG
zApplications Switching power supply zDimensions (Unit : mm) zStructure
zFeatures 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible
zConstruction Silicon carbide epitaxial planer type
ROHM : O-220AC 2L
zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Continuous forward current(*1) Forward current surge peak (60Hz 1cyc) (*2) Junction temperature Storage temperature (*1)Tc=120°C max (*2)PW=8.3ms sinusoidal
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