SCS108AG Datasheet PDF

SiC Schottky Barrier Diode SCS108AG zApplications Switching power supply zDimensions (Unit : mm) zStructure zFeatures 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible zConstruction Silicon carbide epitaxial planer type ROHM : O-220AC 2L zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Continuous forward current(*1) Forward current surge peak (60Hz 1cyc) (*2) Junction temperature Storage temperature (*1)Tc=120°C max (*2)PW=8.3ms sinusoidal Symbol VRM VR IF IFSM Tj Tstg Limits 600 600 8 29 150 −55 to +150 Unit V V A A °C °C zElectrical characteristics (Ta=25°C) Parameter DC blocking voltage Forward voltage Reverse current Total capacitance Total capacitive charge Switching time Thermal resistance Symbol VDC VF IR C Qc tc Rth(j-c) Min. 600 - Typ. 1.5 1.6 345 38 15 15 - Max. 1.7 160 2.0 Unit V V µA pF pF nC ns °C/W IR=0.16mA IF=8A VR=600V Conditions VR=1V,f=1MHz VR=600V,f=1MHz VR=400V,di/dt=300A/µs VR=400V,di/dt=300A/µs junction to case ©2011 ROHM Co., Ltd.