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SCS108AG - SiC Schottky Barrier Diodes

Key Features

  • 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible zConstruction Silicon carbide epitaxial planer type ROHM : O-220AC 2L zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Continuous forward current(.
  • 1) Forward current surge peak (60Hz 1cyc) (.
  • 2) Junction temperature Storage temperature (.
  • 1)Tc=120°C max (.
  • 2)PW=8.3ms sinusoidal www. DataSheet. co. kr Symbol VRM VR IF IFSM Tj Tstg Limits 600 600 8.

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Datasheet Details

Part number SCS108AG
Manufacturer ROHM
File Size 1.11 MB
Description SiC Schottky Barrier Diodes
Datasheet download datasheet SCS108AG Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SiC Schottky Barrier Diode SCS108AG zApplications Switching power supply zDimensions (Unit : mm) zStructure zFeatures 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible zConstruction Silicon carbide epitaxial planer type ROHM : O-220AC 2L zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Continuous forward current(*1) Forward current surge peak (60Hz 1cyc) (*2) Junction temperature Storage temperature (*1)Tc=120°C max (*2)PW=8.3ms sinusoidal www.DataSheet.co.