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SCS106AG - SiC Schottky Barrier Diodes

Key Features

  • 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible.
  • Construction Silicon carbide epitaxial planer type ROHM : TO-220AC 2L.
  • Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Continuous forward current(.
  • 1) Forward current surge peak (60Hz 1cyc) (.
  • 2) Junction temperature Storage temperature (.
  • 1)Tc=124°C max (.
  • 2)PW=8.3ms sinusoidal www. DataSheet. co. kr Symbol VRM VR IF IFSM Tj Tstg Limits.

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Datasheet Details

Part number SCS106AG
Manufacturer ROHM
File Size 1.15 MB
Description SiC Schottky Barrier Diodes
Datasheet download datasheet SCS106AG Datasheet

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Data Sheet SiC Schottky Barrier Diode SCS106AG Applications Switching power supply Dimensions (Unit : mm) Structure Features 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible Construction Silicon carbide epitaxial planer type ROHM : TO-220AC 2L Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Continuous forward current(*1) Forward current surge peak (60Hz 1cyc) (*2) Junction temperature Storage temperature (*1)Tc=124°C max (*2)PW=8.3ms sinusoidal www.DataSheet.co.