ROHM Semiconductor US5U30
The US5U30 combines Pch MOSFET with a Schottky barrier diode in a single 2) High-speed switching, Low On-resistance 3) Low voltage drive (2.5V drive) 4) Built-in Low VF schottky barrier diode 5) Pb-free lead plating ; RoHS compliant lOutline SOT-353T SC-113CA TUMT5 lInner circuit lPackaging specifications Packing Embossed Tape Reel size (mm) 180 lApplication switching Type Tape width (mm) Basic ordering unit (pcs) 8 3000 Taping code TR Marking U30 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS -20 V Gate - Source...| Part No. | US5U30 |
|---|---|
| Datasheet | US5U30 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Pch+SBD MOSFET |
| Buy | Stock & Price |
US5U30 2.5V Drive Pch+SBD MOSFET Datasheet VDSS RDS(on)(Max.) ID PD -20V 390mΩ ±1A 1.0W lFeatures 1) The US5U30 combines Pch MOSFET with a Schottky barrier diode in a single 2) High-speed switching, Low On-resistance 3) Low voltage drive (2.5V drive) 4) Built-in Low VF schottky barrier diode 5) Pb-free lead plating ; RoHS compliant lOutline SOT-353T SC-113CA TUMT5 lInner circuit lPackaging specifications Packing Embossed Tape Reel size (mm) 180 lApplication switching Type Tape width (mm) Basic ordering unit (pcs) 8 3000 Taping code TR Marking U30 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) <MOSFET> Parameter Symbol Value Unit Drain - Source voltage VDSS -20 V Gate - Source voltage VGSS ±12 V Continuous drain current ID ±1 A Pulsed drain current IDP*1 ±4 A Continuous source current (body diode) IS -0.4 A Pulsed source current (body diode) ISP*1 -4 A Power dissipation PD*3 0.7 W/element Junction temperature Tj 150 ℃ © 2017 ROHM Co., Ltd. All rights reserved. 1/10 20...
