ROHM Semiconductor US5U38
The US5U38 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package.US5U38 Transistor 2.5V Drive Pch+SBD MOSFET US5U38 zStructure Silicon P-channel MOSFET Schottky Barrier DIODE zDimensions (Unit : mm) TUMT5 2.0 zFeatures 1) 2) Low on-resistance with fast switching. 3) Low voltage drive (2.5V). 4) Built-in schottky barrier diode has low forward voltage. Abbreviated symbol : U38 zApplications Switching zEquivalent circuit (5) (4) ∗2 zPackaging specifications Package Type US5U38 Code Basic ordering unit (pieces) Taping TR 3000 ∗1 (1) (2) ∗1 ESD protection diode ∗2 Body diode (3) (1)Gate (2)Source (3)Anode (4)Cathode (5)Drain zAbsolute maximum ratings (Ta=25°C) <MOSFET> Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Channel temperature Power dissipation <Di> Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Power dissipation <MOSFET AND Di> Power dissipation Range of storage temperature Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1...