ROHM Semiconductor US5U35
The US5U35 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package.| Part No. | US5U35 |
|---|---|
| Datasheet | US5U35 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | 4V Drive PchSBD MOSFET |
| Buy | Stock & Price |
US5U35 Transistor 4V Drive Pch+SBD MOSFET US5U35 zStructure Silicon P-channel MOSFET Schottky Barrier DIODE zFeatures 1) 2) With fast switching. 3) Built-in schottky barrier diode has low forward voltage. zDimensions (Unit : mm) TUMT5 2.0 Abbreviated symbol : U35 zApplications Switching zPackaging specifications Package Type US5U35 Code Basic ordering unit (pieces) Taping TR 3000 zEquivalent circuit (5) (4) ∗2 ∗1 (1) (2) ∗1 ESD protection diode ∗2 Body diode (3) (1)Gate (2)Source (3)Anode (4)Cathode (5)Drain 0.2Max. 1.3 1/5 US5U35 Transistor zAbsolute maximum ratings (Ta=25°C) <MOSFET> Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Channel temperature Power dissipation <Di> Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Power dissipation <MOSFET AND Di> Power dissipation Range of storage temperature Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 Tch P...
