| Part number | RU190N08Q |
|---|---|
| Datasheet | RU190N08Q-Ruichips.pdf |
| File Size | 401.31 KB |
| Manufacturer | Ruichips |
| Description | N-Channel Advanced Power MOSFET |
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RU190N08Q Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) ④ (TA=25°C Unless Otherwise Noted) RU190N08Q Parameter Test Condition Min. Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS=30V, VGS= 10V, IDS=40A 155 45 48 nC ①Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 90A.
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|---|---|
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