RU190N10Q - N-Channel Advanced Power MOSFET

Product Overview

Ruichips

Datasheet Details

Part number	RU190N10Q
Manufacturer	Ruichips
File Size	277.88 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU190N10Q Datasheet
Additional preview pages of the RU190N10Q datasheet.

Product details

Description

TO-247 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG IS Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C IDP 300µs Pulsed Drain Current Tested ID Continue Drain Current(VGS=10V) TC=25°C TC=25°C TC=100°C PD Maximum Power Dissipation RθJC Thermal Resistance -Junction to Case TC=25°C TC=100

Features

100V/190A RDS (ON)=6.5mΩ(Typ. ) @ VGS=10V.
Avalanche Rated.
Reliable and Rugged.
Lead Free and Green Devices Available.

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Published: Apr 10, 2017 |