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RU190N10S - N-Channel Advanced Power MOSFET

Description

TO-263 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG IS Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat S

Features

100V/190A RDS (ON)=6.5mΩ(Typ. ) @ VGS=10V.
Avalanche Rated.
Reliable and Rugged.
Lead Free and Green Devices Available.

Ruichips

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RU190N10S n-channel advanced power mosfet by Ruichips - Datasheet Preview

Datasheet Details

Part number	RU190N10S
Manufacturer	Ruichips
File Size	280.36 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU190N10S Datasheet

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Full PDF Text Transcription

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RU190N10S N-Channel Advanced Power MOSFET Features · 100V/190A RDS (ON)=6.5mΩ(Typ.

Published: Apr 10, 2017 |