Datasheet4U Logo Datasheet4U.com

RU190N08S - N-Channel Advanced Power MOSFET

Description

TO-263 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG IS Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat S

Features

  • 80V/190A RDS (ON)=3.9mΩ(Typ. ) @ VGS=10V.
  • Avalanche Rated.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available.

📥 Download Datasheet

Datasheet Details

Part number RU190N08S
Manufacturer Ruichips
File Size 317.86 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU190N08S Datasheet

📁 Similar Datasheet

Other Datasheets by Ruichips
  • RU190N08 - N-Channel Advanced Power MOSFET
  • RU190N08Q - N-Channel Advanced Power MOSFET
  • RU190N08R - N-Channel Advanced Power MOSFET
  • RU190N10Q - N-Channel Advanced Power MOSFET
  • RU190N10R - N-Channel Advanced Power MOSFET
  • RU190N10S - N-Channel Advanced Power MOSFET
  • RU1088R - N-Channel Advanced Power MOSFET
  • RU120N15Q - N-Channel Advanced Power MOSFET

Full PDF Text Transcription

Click to expand full text
RU190N08S N-Channel Advanced Power MOSFET Features · 80V/190A RDS (ON)=3.9mΩ(Typ.
Published: |