RU206G Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

RU206G n-channel advanced power mosfet by Ruichips - Datasheet Preview

Datasheet Details

Part number	RU206G
Manufacturer	Ruichips
File Size	238.69 KB
Description	N-Channel Advanced Power MOSFET
Download	RU206G Download (PDF)

General Description

TSSOP-8 Applications • Power Management Absolute Maximum Ratings Dual N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID PD ② RθJA Continuous Drain Current(VGS=4.5V) TA=25°C TA=70°C Maximum Power Dissipation TA=25°C TA=70°C Thermal Resistance-Junction to Ambient Rating 20 ±12 150 -55 to 150 1.7 ① 24 6 4.5 1.5 0.96 83.5 Unit V °C °C A A A W °C/W Copyright© Ruichips Semiconductor Co., Ltd Rev.

A– APR., 2012 www.ruichips.com RU206G Electri

Overview

RU206G N-Channel Advanced Power MOSFET MOSFET.

Key Features

20V/6A, RDS (ON) =18mΩ (Typ. ) @ VGS=4.5V RDS (ON) =24mΩ (Typ. ) @ VGS=2.5V.
Super High Dense Cell Design.
Reliable and Rugged.
Lead Free and Green Available Pin.

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