RU206G Datasheet PDF (N-Channel Advanced Power MOSFET)

RU206G - N-Channel Advanced Power MOSFET

Description

TSSOP-8 Applications Power Management Absolute Maximum Ratings Dual N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Con

Features

20V/6A, RDS (ON) =18mΩ (Typ. ) @ VGS=4.5V RDS (ON) =24mΩ (Typ. ) @ VGS=2.5V.
Super High Dense Cell Design.
Reliable and Rugged.
Lead Free and Green Available Pin.

Datasheet Details

Part number	RU206G
Manufacturer	Ruichips
File Size	238.69 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU206G Datasheet
Additional preview pages of the RU206G datasheet.

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Full PDF Text Transcription

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RU206G N-Channel Advanced Power MOSFET MOSFET Features • 20V/6A, RDS (ON) =18mΩ (Typ.) @ VGS=4.5V RDS (ON) =24mΩ (Typ.) @ VGS=2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Available Pin Description TSSOP-8 Applications • Power Management Absolute Maximum Ratings Dual N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID PD ② RθJA Continuous Drain Current(VGS=4.

Published: Apr 10, 2017 |