Datasheet Details
| Part number | RU207C |
|---|---|
| Manufacturer | Ruichips |
| File Size | 479.19 KB |
| Description | N-Channel Advanced Power MOSFET |
| Download | RU207C Download (PDF) |
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| Part number | RU207C |
|---|---|
| Manufacturer | Ruichips |
| File Size | 479.19 KB |
| Description | N-Channel Advanced Power MOSFET |
| Download | RU207C Download (PDF) |
|
|
|
Applications • Power Management Absolute Maximum Ratings Symbol times Parameter g Common Ratings (TA=25°C Unless Otherwise Noted) n VDSS Drain-Source Voltage he VGSS Gate-Source Voltage gs TJ Maximum Junction Temperature n TSTG Storage Temperature Range To IS Diode Continuous Forward Current Mounted on Large Heat Sink For IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=4.5V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA③ Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings OnlySOT23-3 Use N-Channel MOSFET Rating Unit TA=25°C 20 V ±12 150 °C -55 to 150 °C 1.7 A TA=25°C TA=25°C TA=70°C TA=25°C TA=70°C 24 A 6 A 4.5 1.25 W 0.75 - °C/W 100 °C/W EAS④ Avalanche Energy, Single Pulsed TBD mJ Ruichips Semiconductor Co., Ltd Rev.
C– AUG., 2015 1 www.ruichips.com sales.Mr.wang13826508770 www.sztssd.com RU207C Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU207C Unit Min.
Typ.
sales.Mr.wang13826508770 www.sztssd.com RU207C N-Channel Advanced Power.
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