RU207C Datasheet PDF (N-Channel Advanced Power MOSFET)

RU207C - N-Channel Advanced Power MOSFET

Description

Applications Power Management Absolute Maximum Ratings Symbol times Parameter g Common Ratings (TA=25°C Unless Otherwise Noted) n VDSS Drain-Source Voltage he VGSS Gate-Source Voltage gs TJ Maximum Junction Temperature n TSTG Storage Temperature Range To IS Diode Continuous F

Features

20V/6A, RDS (ON) =10mΩ(Typ. )@VGS=4.5V RDS (ON) =15mΩ(Typ. )@VGS=2.5V.
Low RDS (ON).
Super High Dense Cell Design.
Reliable and Rugged.
Lead Free and Green Devices Available (RoHS Compliant) Pin.

Datasheet Details

Part number	RU207C
Manufacturer	Ruichips
File Size	479.19 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU207C Datasheet

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Full PDF Text Transcription

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sales.Mr.wang13826508770 www.sztssd.com RU207C N-Channel Advanced Power MOSFET Features • 20V/6A, RDS (ON) =10mΩ(Typ.)@VGS=4.5V RDS (ON) =15mΩ(Typ.)@VGS=2.5V • Low RDS (ON) • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description Applications • Power Management Absolute Maximum Ratings Symbol times Parameter g Common Ratings (TA=25°C Unless Otherwise Noted) n VDSS Drain-Source Voltage he VGSS Gate-Source Voltage gs TJ Maximum Junction Temperature n TSTG Storage Temperature Range To IS Diode Continuous Forward Current Mounted on Large Heat Sink For IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=4.

Published: Jan 21, 2025 |