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RU2090M Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

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Datasheet Details

Part number RU2090M
Manufacturer Ruichips
File Size 304.57 KB
Description N-Channel Advanced Power MOSFET
Download RU2090M Download (PDF)

General Description

PDFN5060 Applications • Rectification • Switching Application Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation Copyright Ruichips Semiconductor Co., Ltd Rev.

A– MAY., 2012 N-Channel MOSFET TC=25°C TC=25°C TC=25°C TC=100°C TA=25°C TA=70°C TC=25°C TC=100°C TA=25°C TA=70°C Rating Unit 20 ±12 150 -55 to 150 50 V °C °C A â‘¡ 360 â‘  99 â‘  66 â‘¢ 26 â‘

Key Features

  • 20V/99A, RDS (ON) =2.3mΩ(Typ. )@VGS=10V RDS (ON) =4mΩ(Typ. )@VGS=4.5V.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

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