Datasheet Details
| Part number | RU2H30R |
|---|---|
| Manufacturer | Ruichips |
| File Size | 306.46 KB |
| Description | N-Channel Advanced Power MOSFET |
| Datasheet | RU2H30R-Ruichips.pdf |
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| Part number | RU2H30R |
|---|---|
| Manufacturer | Ruichips |
| File Size | 306.46 KB |
| Description | N-Channel Advanced Power MOSFET |
| Datasheet | RU2H30R-Ruichips.pdf |
|
|
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GD S TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed S N-Channel MOSFET Rating Unit TC=25°C 200 ±25 175 -55 to 175 30 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 120 A 30 A 23 176 W 88 0.85 °C/W 62.5 °C/W 81 mJ Ruichips Semiconductor Co., Ltd Rev.
A– SEP., 2013 1 www.ruichips.com RU2H30R Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU2H30R Min.
Typ.
| Part Number | Description |
|---|---|
| RU2H30Q | N-Channel Advanced Power MOSFET |
| RU2H30S | N-Channel Advanced Power MOSFET |
| RU2H15S | N-Channel Advanced Power MOSFET |
| RU2H50Q | N-Channel Advanced Power MOSFET |
| RU2H50R | N-Channel Advanced Power MOSFET |
| RU2H50S | N-Channel Advanced Power MOSFET |
| RU2HE2D | N-Channel Advanced Power MOSFET |
| RU2HE5L | N-Channel Advanced Power MOSFET |
| RU20120L | N-Channel Advanced Power MOSFET |
| RU20130L | N-Channel Advanced Power MOSFET |