RU2H30R - N-Channel Advanced Power MOSFET

Datasheet Summary

Description

GD S TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① ID

Features

200V/30A, RDS (ON) =75mΩ(Typ. ) @ VGS=10V.
Ultra Low On-Resistance.
Fast Switching and Fully Avalanche Rated.
100% avalanche tested.
175°C Operating Temperature.
Lead Free and Green Available.

Ruichips

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Datasheet Details

Part number	RU2H30R
Manufacturer	Ruichips
File Size	306.46 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU2H30R Datasheet
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Features • 200V/30A, RDS (ON) =75mΩ(Typ.

Published: Apr 25, 2016 |