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RU2H30Q Datasheet N-channel Advanced Power MOSFET

Manufacturer: Ruichips

Overview: RU2H30Q N-Channel Advanced Power MOSFET MOSFET.

Datasheet Details

Part number RU2H30Q
Manufacturer Ruichips
File Size 430.25 KB
Description N-Channel Advanced Power MOSFET
Datasheet RU2H30Q-Ruichips.pdf

General Description

TO-220 TO-220F TO-263 TO-247 Applications • Switching Application Systems • DC/DC Converters N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev.

A– JUL., 2011 Rating 200 ±25 175 -55 to 175 30 ① 120 ② 30 ② 23 180 90 0.83 Unit V °C °C A A A W °C/W 81 mJ www.ruichips.com RU2H30Q Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU2H30Q Unit Min.

Typ.

Key Features

  • 200V/30A, RDS (ON) =75mΩ (Typ. ) @ VGS=10V.
  • Ultra Low On-Resistance.
  • Fast Switching and Fully Avalanche Rated.
  • 100% avalanche tested.
  • 175°C Operating Temperature.
  • Lead Free and Green Available Pin.

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