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RU40S4H Datasheet P-channel Advanced Power MOSFET

Manufacturer: Ruichips

Overview: RU40S4H P-Channel Advanced Power MOSFET MOSFET.

Datasheet Details

Part number RU40S4H
Manufacturer Ruichips
File Size 288.26 KB
Description P-Channel Advanced Power MOSFET
Datasheet RU40S4H-Ruichips.pdf

General Description

SOP-8 Applications • Power Management.

Absolute Maximum Ratings Dual P-Channel MOSFET Symbol Parameter mon Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID PD ② RθJA Continuous Drain Current(VGS=-10V) TA=25°C TA=70°C Maximum Power Dissipation TA=25°C TA=70°C Thermal Resistance-Junction to Ambient Rating -40 ±20 150 -55 to 150 -2.4 ① -16 -4 -3.1 2 1.3 62.5 Unit V °C °C A A A W °C/W Copyright© Ruichips Semiconductor Co., Ltd Rev.

C– OCT., 2012 .ruichips.

Key Features

  • -40V/-4A, RDS (ON) =65mΩ (Typ. ) @ VGS=-10V RDS (ON) =85mΩ (Typ. ) @ VGS=-4.5V.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • Lead Free and Green Available Pin.

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