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RU5H11P Datasheet N-channel Advanced Power MOSFET

Manufacturer: Ruichips

Datasheet Details

Part number RU5H11P
Manufacturer Ruichips
File Size 361.05 KB
Description N-Channel Advanced Power MOSFET
Datasheet RU5H11P-Ruichips.pdf

General Description

TO-220 TO-263 TO-220F TO-247 Applications • High efficiency SMPS • Lighting • Off-Line Adaptors N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ② EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev.

A – SEP., 2011 Rating 500 ±30 150 -55 to 150 11.5 ① 44 ① 11.5 ① 8.1 35 14 3.6 320 Unit V °C °C A A A W °C/W mJ .ruichips.

RU5H11P Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU5H11P Unit Min.

Key Features

  • 500V/11.5A, RDS (ON) =0.55Ω (Typ. ) @ VGS=10V.
  • Gate Charge Minimized.
  • Low Crss.
  • Extremely High dv/dt Capability.
  • 100% Avalanche Tested.
  • Lead Free and Green Available RU5H11P N-Channel Advanced Power MOSFET MOSFET Pin.

RU5H11P Distributor