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RU5H5R Datasheet N-channel Advanced Power MOSFET

Manufacturer: Ruichips

Overview: RU5H5R N-Channel Advanced Power MOSFET MOSFET.

Datasheet Details

Part number RU5H5R
Manufacturer Ruichips
File Size 309.58 KB
Description N-Channel Advanced Power MOSFET
Datasheet RU5H5R-Ruichips.pdf

General Description

• 100% avalanche tested • Lead Free and Green Devices Available (RoHS pliant) Applications • High efficiency switch mode power supplies • Lighting TO-220 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev.

A– MAR., 2012 Rating 500 ±30 150 -55 to 150 ① 5 ② 20 ① 5 3.5 78 31 1.6 Unit V °C °C A A A W W °C/W 40 mJ .ruichips.

RU5H5R Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU5H5R Unit Min.

Key Features

  • 500V/5A, RDS (ON) =1.2Ω(Typ. )@VGS=10V.
  • Super High Dense Cell Design.
  • Fast Switching Pin.

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