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RU5H18Q Datasheet N-channel Advanced Power MOSFET

Manufacturer: Ruichips

Datasheet Details

Part number RU5H18Q
Manufacturer Ruichips
File Size 280.64 KB
Description N-Channel Advanced Power MOSFET
Datasheet RU5H18Q-Ruichips.pdf

General Description

TO-247 Applications • High efficiency switch mode power supplies • Lighting N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ② EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev.

A – MAY., 2012 Rating 500 ±30 150 -55 to 150 18 ① 72 ① 18 ① 13.5 290 116 0.43 162 Unit V °C °C A A A W °C/W mJ .ruichips.

RU5H18Q Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU5H18Q Unit Min.

Key Features

  • 500V/18A, RDS (ON) =0.27Ω (Typ. ) @ VGS=10V.
  • Gate charge minimized.
  • Low Crss( Typ. 26pF).
  • Extremely high dv/dt capability.
  • 100% avalanche tested.
  • Lead Free and Green Available RU5H18Q N-Channel Advanced Power MOSFET MOSFET Pin.

RU5H18Q Distributor