RU60450Q Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

RU60450Q n-channel advanced power mosfet by Ruichips - Datasheet Preview

Datasheet Details

Part number	RU60450Q
Manufacturer	Ruichips
File Size	272.04 KB
Description	N-Channel Advanced Power MOSFET
Download	RU60450Q Download (PDF)

General Description

G DS TO247 D i G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev.

A– MAY., 2013 1 S N-Channel MOSFET Rating Unit TC=25°C 60 ±25 175 -55 to 175 450 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 1800 450 318 600 300 0.25 50 A A W °C/W °C/W 1406 mJ www.ruichips.com RU60450Q Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU60450Q Min.

Typ.

Overview

RU60450Q N-Channel Advanced Power MOSFET.

Key Features

60V/450A, RDS (ON) =1.3mΩ(Typ. )@VGS=10V.
Ultra Low On-Resistance.
Super High Dense Cell Design.
Fast Switching and Fully Avalanche Rated.
100% avalanche tested.
175°C Operating Temperature.
Lead Free and Green Devices Available (RoHS Compliant).

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