RU60E6H
RU60E6H is N-Channel Advanced Power MOSFET manufactured by Ruichips.
Features
- 60V/6A, RDS (ON) =31mΩ (Type) @ VGS=10V RDS (ON) =37mΩ (Type) @ VGS=4.5V
- Super High Dense Cell Design
- Reliable and Rugged
- ESD Protected
- Lead Free and Green Available
Pin Description
SOP-8
Applications
- Power Management.
- Switch Applications.
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter mon Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
TC=25°C
②
RθJA
Continuous Drain Current(VGS=10V)
TC=25°C TC=70°C
Maximum Power Dissipation
TC=25°C TC=70°C
Thermal Resistance-Junction to Ambient
Rating
60 ±20 150 -55 to 150
①
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