Datasheet Details
| Part number | RU60P60R |
|---|---|
| Manufacturer | Ruichips |
| File Size | 314.68 KB |
| Description | P-Channel Advanced Power MOSFET |
| Datasheet | RU60P60R-Ruichips.pdf |
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Overview: RU60P60R P-Channel Advanced Power MOSFET.
| Part number | RU60P60R |
|---|---|
| Manufacturer | Ruichips |
| File Size | 314.68 KB |
| Description | P-Channel Advanced Power MOSFET |
| Datasheet | RU60P60R-Ruichips.pdf |
|
|
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G DS TO220 D G Absolute Maximum Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=-10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed S P-Channel MOSFET Rating Unit TC=25°C -60 ±20 175 -55 to 175 -60 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C -240 -60 -42 176 88 0.85 62.5 A A W °C/W °C/W 756 mJ Ruichips Semiconductor Co., Ltd Rev.
A– JUL., 2013 1 .ruichips.
RU60P60R Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU60P60R Min.
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