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RU6H9R Datasheet N-channel Advanced Power MOSFET

Manufacturer: Ruichips

Overview: RU6H9R N-Channel Advanced Power MOSFET MOSFET.

Datasheet Details

Part number RU6H9R
Manufacturer Ruichips
File Size 281.21 KB
Description N-Channel Advanced Power MOSFET
Datasheet RU6H9R-Ruichips.pdf

General Description

TO-220 Applications • High efficiency switch mode power supplies • Lighting N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev.

A– FEB., 2012 Rating 600 ±30 150 -55 to 150 ① 9.5 ② 38 ① 9.5 6.2 156 62 0.8 Unit V °C °C A A A W W °C/W 10 mJ .ruichips.

RU6H9R Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU6H9R Unit Min.

Key Features

  • 600V/9.5A, RDS (ON) =0.7Ω (Typ. ) @ VGS=10V.
  • Gate charge minimized.
  • Low Crss( Typ. 20pF).
  • Extremely high dv/dt capability.
  • 100% avalanche tested.
  • Lead Free and Green Available Pin.

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