RU6Z8R Datasheet | Ruichips

Features - 650V/8A, RDS (ON) =900mΩ(Typ.)@VGS=10V - Super High Dense Cell Design - Fast Switching - 100% avalanche tested - Lead Free and Green Devices Available (Ro HS pliant) Pin Description Applications - High efficiency switch mode power supplies - Lighting TO220 Absolute Maximum Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink ① 300μs Pulse Drain Current Tested ② Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev. B- DEC., 2012 N-Channel MOSFET Rating Unit TC=25°C 650 ±30 150 -55...