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RU75400Q Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

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Datasheet Details

Part number RU75400Q
Manufacturer Ruichips
File Size 252.54 KB
Description N-Channel Advanced Power MOSFET
Download RU75400Q Download (PDF)

General Description

G DS TO247 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed S N-Channel MOSFET Rating Unit TC=25°C 75 ±25 175 -55 to 175 400 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 1480 400 283 600 300 0.25 50 A A W °C/W °C/W 1225 mJ Ruichips Semiconductor Co., Ltd Rev.

A– MAR., 2013 1 www.ruichips.com RU75400Q Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU75400Q Min.

Typ.

Overview

RU75400Q N-Channel Advanced Power MOSFET.

Key Features

  • 75V/400A, RDS (ON) =1.5mΩ(Typ. )@VGS=10V.
  • Ultra Low On-Resistance.
  • Exceptional dv/dt capability.
  • Fast Switching and Fully Avalanche Rated.
  • 100% avalanche tested.
  • 175°C Operating Temperature.
  • Lead Free and Green Devices Available (RoHS Compliant).

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