SW2N65B
SW2N65B is manufactured by SAMWIN.
SAMWIN
N-channel MOSFET
Features
TO-220F
- High ruggedness
- RDS(ON) (Max 5.6 Ω)@VGS=10V
- Gate Charge (Typical 7.7nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
12 3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and SMPS. It’s typical application is TV and monitor.
BVDSS : 650V ID : 2.0A RDS(ON) : 5.6ohm
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