SW2N40DC Overview
This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Drain current is limited by junction temperature.
SW2N40DC Key Features
- High ruggedness
- Low RDS(ON) (Typ 2.8Ω)@VGS=10V
- Low Gate Charge (Typ 6.8nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
- Application:DC-DC,LED