This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | SW8604 |
|---|---|
| Datasheet | SW8604 SW8600 Datasheet (PDF) |
| File Size | 824.13 KB |
| Manufacturer | SAMWIN |
| Description | Built-in high-voltage MOSFET |
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脉冲宽度由最大结温决定； VCC,MAX VFB PD Darting TJ Tamb TSTG 21 -0.3~ VSD 1.5 0.017 +160 -25~ +85 -55~+150 V V W W/°C °C °C °C 2. L=51mH， TJ=25°C(起始)。 电气参数(感应 MOSFET 部分，除非特殊说明， Tamb=25°C) 参 数 漏源击穿电压 符 号 测试条件 VDS=650V.
| Part Number | Description |
|---|---|
| SW8600 | Built-in high-voltage MOSFET |
| SW8601 | Built-in high-voltage MOSFET |
| SW8603 | Built-in high-voltage MOSFET |
| SW830 | N-Channel MOSFET |
| SW830A | N-channel MOSFET |
| SW840 | N-Channel MOSFET |
| SW840A | N-channel MOSFET |
| SW88N60K2 | N-channel MOSFET |
| SW8N60 | N-channel MOSFET |
| SW8N60D | N-channel MOSFET |
