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GKI04076 - N Channel Trench Power MOSFET

Features

  • V(BR)DSS --------------------------------- 40 V (ID = 100 µA).
  • ID ---------------------------------------------------------- 26 A.
  • RDS(ON) ----------8.9 mΩ max. (VGS = 10 V, ID = 23.3 A).
  • Qg------- 7.9 nC (VGS = 4.5 V, VDS = 20 V, ID = 29.6 A).
  • Low Total Gate Charge.
  • High Speed Switching.
  • Low On-Resistance.
  • Capable of 4.5 V Gate Drive.
  • 100 % UIL Tested.
  • RoHS Compliant.

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Datasheet preview – GKI04076

Datasheet Details

Part number GKI04076
Manufacturer Sanken
File Size 594.57 KB
Description N Channel Trench Power MOSFET
Datasheet download datasheet GKI04076 Datasheet
Additional preview pages of the GKI04076 datasheet.

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Full PDF Text Transcription

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40 V, 26 A, 6.9 mΩ Low RDS(ON) N ch Trench Power MOSFET GKI04076 Features  V(BR)DSS --------------------------------- 40 V (ID = 100 µA)  ID ---------------------------------------------------------- 26 A  RDS(ON) ----------8.9 mΩ max. (VGS = 10 V, ID = 23.3 A)  Qg------- 7.9 nC (VGS = 4.5 V, VDS = 20 V, ID = 29.6 A)  Low Total Gate Charge  High Speed Switching  Low On-Resistance  Capable of 4.
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