Datasheet Summary
40 V, 26 A, 6.9 mΩ Low RDS(ON) N ch Trench Power MOSFET
Features
- V(BR)DSS --------------------------------- 40 V (ID = 100 µA)
- ID ---------------------------------------------------------- 26 A
- RDS(ON) ----------8.9 mΩ max. (VGS = 10 V, ID = 23.3 A)
- Qg------- 7.9 nC (VGS = 4.5 V, VDS = 20 V, ID = 29.6 A)
- Low Total Gate Charge
- High Speed Switching
- Low On-Resistance
- Capable of 4.5 V Gate Drive
- 100 % UIL Tested
- RoHS pliant
Applications
- DC-DC converters
- Synchronous Rectification
- Power Supplies
Package
DFN 5 × 6
8pin DDDD
8pin DDDD
SSSG 1pin
GSSS 1pin
Not to scale
Equivalent circuit
D(5)(6)(7)(8)
G(4)...