Datasheet Summary
60 V, 40 A, 4.8 mΩ Low RDS(ON) N ch Trench Power MOSFET
Features
- V(BR)DSS --------------------------------- 60 V (ID = 100 µA)
- ID ---------------------------------------------------------- 40 A
- RDS(ON) ----------6.5 mΩ max. (VGS = 10 V, ID = 34.0 A)
- Qg------26.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 39.0 A)
- Low Total Gate Charge
- High Speed Switching
- Low On-Resistance
- Capable of 4.5 V Gate Drive
- 100 % UIL Tested
- RoHS pliant
Applications
- DC-DC converters
- Synchronous Rectification
- Power Supplies
Package
DFN 5 × 6 (L)
8pin DDDD
8pin DDDD
SSSG 1pin
GSSS 1pin
Not to scale
Equivalent circuit
D(5)(6)(7)(8)
G(4)...