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GKI06259 - N Channel Trench Power MOSFET

Key Features

  • V(BR)DSS --------------------------------- 60 V (ID = 100 µA).
  • ID ---------------------------------------------------------- 22 A.
  • RDS(ON) -------- 21.7 mΩ max. (VGS = 10 V, ID = 12.5 A).
  • Qg------- 6.6 nC (VGS = 4.5 V, VDS = 30 V, ID = 15.8 A).
  • Low Total Gate Charge.
  • High Speed Switching.
  • Low On-Resistance.
  • Capable of 4.5 V Gate Drive.
  • 100 % UIL Tested.
  • RoHS Compliant.

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Datasheet Details

Part number GKI06259
Manufacturer Sanken
File Size 594.48 KB
Description N Channel Trench Power MOSFET
Datasheet download datasheet GKI06259 Datasheet

Full PDF Text Transcription for GKI06259 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for GKI06259. For precise diagrams, and layout, please refer to the original PDF.

60 V, 22 A, 16.5 mΩ Low RDS(ON) N ch Trench Power MOSFET GKI06259 Features  V(BR)DSS --------------------------------- 60 V (ID = 100 µA)  ID --------------------------...

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------------------- 60 V (ID = 100 µA)  ID ---------------------------------------------------------- 22 A  RDS(ON) -------- 21.7 mΩ max. (VGS = 10 V, ID = 12.5 A)  Qg------- 6.6 nC (VGS = 4.5 V, VDS = 30 V, ID = 15.8 A)  Low Total Gate Charge  High Speed Switching  Low On-Resistance  Capable of 4.