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GKI06109 - N Channel Trench Power MOSFET

Key Features

  • V(BR)DSS --------------------------------- 60 V (ID = 100 µA).
  • ID ---------------------------------------------------------- 26 A.
  • RDS(ON) ----------9.5 mΩ max. (VGS = 10 V, ID = 23.6 A).
  • Qg------16.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 28.5 A).
  • Low Total Gate Charge.
  • High Speed Switching.
  • Low On-Resistance.
  • Capable of 4.5 V Gate Drive.
  • 100 % UIL Tested.
  • RoHS Compliant.

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Datasheet Details

Part number GKI06109
Manufacturer Sanken
File Size 590.08 KB
Description N Channel Trench Power MOSFET
Datasheet download datasheet GKI06109 Datasheet

Full PDF Text Transcription for GKI06109 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for GKI06109. For precise diagrams, and layout, please refer to the original PDF.

60 V, 26 A, 7.0 mΩ Low RDS(ON) N ch Trench Power MOSFET GKI06109 Features  V(BR)DSS --------------------------------- 60 V (ID = 100 µA)  ID ---------------------------...

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------------------ 60 V (ID = 100 µA)  ID ---------------------------------------------------------- 26 A  RDS(ON) ----------9.5 mΩ max. (VGS = 10 V, ID = 23.6 A)  Qg------16.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 28.5 A)  Low Total Gate Charge  High Speed Switching  Low On-Resistance  Capable of 4.