SFB120N80
SFB120N80 is N-MOSFET manufactured by SCILICON.
Features
Adanced trench process technology Extremely low on-resistance RDS(on) Excellent Qgx RDS(on) product(FOM) Fast Switching High Ruggedness
Application
Motor Drives UPS (Uninterruptible Power Supplies) DC/DC converter General purpose applications
SFP(B)100N80
N-MOSFET 80V, 100A, 5.7mΩ
Product Summary
VDS RDS(on)@VGS=10V ID
80V 5.7 mΩ
100A
Part ID
Package Type Marking
SFP120N80 SFB120N80
TO-220 TO-263
100N80 100N80
Maximum Ratings
Parameter
Drain-source voltage Continuous drain current TC = 25°C
TC = 100°C Pulsed drain current TC = 25°C, tp limited by Tjmax Avalanche energy, single pulse (L=1m H,Rg=25Ω, ID=sweep(14A~46A)) Gate-emitter voltage Power dissipation TC = 25°C Operating junction and storage temperature
Symbol VDS
Value 80
Unit V
ID ID pulse
80 480
EAS VGS Ptot Tj , Tstg
1000 ±25 178 -55...+150 m J V W ℃
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SFP(B)100N80
Thermal Resistance
Parameter Thermal resistance,...
