SFB120N85
SFB120N85 is N-MOSFET manufactured by SCILICON.
Features
Adanced trench process technology Extremely low on-resistance RDS(on) Excellent Qgx RDS(on) product(FOM) Fast Switching High Ruggedness
Application
Motor Drives UPS (Uninterruptible Power Supplies) DC/DC converter General purpose applications
SFP(B)120N85
N-MOSFET 85V, 120A, 5.5mΩ
Product Summary
VDS RDS(on)@VGS=10V ID
85V 5.5 mΩ
120A
Part ID
Package Type Marking
SFP120N85 SFB120N85
TO-220 TO-263
120N85 120N85
Maximum Ratings
Parameter
Drain-source voltage Continuous drain current TC = 25°C (Silicon limit) TC = 25°C (Package limit) TC = 100°C (Silicon limit) Pulsed drain current TC = 25°C, tp limited by Tjmax Avalanche energy, single pulse (L=1m H,Rg=25Ω, ID=sweep(14A~46A)) Gate-emitter voltage Power dissipation TC = 25°C
Operating junction and storage temperature
Symbol VDS
Value 85
Unit V
ID ID pulse
138 120 87
EAS VGS Ptot Tj , Tstg
1000 ±20 189 -55...+150 m J V W ℃
Page 1
SFP(B)120N85
Thermal Resistance
Parameter Thermal resistance,...
