SFB120N80B Datasheet | SCILICON

SFP(B)120N80B N-MOSFET 80V, 120A, 5.5mΩ Features Adanced trench process technology Fully characterized Avalance voltage and current Good stablity and uniformity with hige EAS Fast Switching High Ruggedness Product Summary VDS RDS(on)@VGS=10V ID 80V 5.5 mΩ 120A Application Power switching application UPS (Uninterruptible Power Supplies) DC/DC converter General purpose applications Part ID Package Type Marking SFP120N80B SFB120N80B TO-220 TO-263 120N80B 120N80B Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C (Silicon limit) TC = 100°C (Silicon limit) Pulsed drain current TC = 25°C, tp limited by Tjmax Avalanche energy, single pulse (L=1m H,Rg=25Ω, ID=sweep(14A~46A)) Gate-emitter voltage Power dissipation TC = 25°C Operating junction and storage temperature Symbol VDS Value 80 Unit V ID ID pulse 90 450 EAS VGS Ptot Tj , Tstg 1200 ±20 220 -55...+150 m J V W ℃ Page 1 SFP(B)120N80B Thermal Resistance Parameter Thermal...