SFB130N100 Datasheet | SCILICON

Features - N-Channel，10V Logic Level Control - Enhancement mode - Very low on-resistance RDS(on) @ VGS=10V - 100% Avalanche test - Pb-free lead plating; Ro HS pliant Applications - Switching application - Power Management for Inverter Systems. SFP(B)130N100 N-MOSFET 100V, 130A, 6.6mΩ Product Summary V DS R @DS(on),TYP VGS=10V ID 100 V 6.6 mΩ 130 A Part ID Package Type Marking SFP130N100 SFB130N100 TO-220 TO-263 130N100 130N100 Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics Symbol Parameter RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient TC =25°C TC =25°C TC...