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HFS4N60 - 600V N-Channel MOSFET

Key Features

  •  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 15 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 2.0 Ω (Typ. ) @VGS=10V  100% Avalanche Tested TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID Drain-Source Voltage Drain Current Drain Current.
  • C.

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Datasheet Details

Part number HFS4N60
Manufacturer SEMIHOW
File Size 767.59 KB
Description 600V N-Channel MOSFET
Datasheet download datasheet HFS4N60 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HFS4N60 July 2005 HFS4N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 2.0 Ω ID = 4.0 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 15 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 2.0 Ω (Typ.) @VGS=10V  100% Avalanche Tested TO-220F 12 3 1.Gate 2. Drain 3.