HFS4N65F - N-Channel MOSFET

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SemiHow

Part number	HFS4N65F
Manufacturer	SemiHow
File Size	199.68 KB
Description	N-Channel MOSFET
Datasheet	HFS4N65F Datasheet
Additional preview pages of the HFS4N65F datasheet.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 8.5 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 3.0 ȍ7S#9GS=10V 100% Avalanche Tested BVDSS = 650 V RDS(on) typ ȍ ID = 4 A TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR.

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Published: Jun 27, 2016 |