HFS4N65 Datasheet | SemiHow

April 2006 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 2.3 Ω ID = 3.6- A Features  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 15 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 2.3 Ω (Typ.) @VGS=10V  100% Avalanche Tested TO-220F 12 3 1.Gate 2. Drain 3. Source...