Semtech Corporation 2N2907
PNP Silicon Epitaxial Planar Transistor
ABSOLUTE MAXIMUM RATINGS
(Ta = 25℃) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range 2N2907 2N2907A Symbol -VCBO -VCEO -VEBO -IC Ptot Tj Tstg Value 60 40 60 5 600 625 150 - 55 to + 150 Unit V V V mA mW ℃ ℃ SEMTECH ELECTRONICS LTD. ® Dated: 12/04/2016 Re: 02 2N2907 / 2N2907A Characteristics at Ta = 25℃ Parameter DC Current Gain at -IC = 0.1 mA, -VCE = 10 V at -IC = 1 mA, -VCE = 10 V at -IC = 10 mA, -VCE = 10 V at -IC = 150 mA, -VCE = 10 V at -IC = 500 mA