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2SA683 / 2SA684
PNP Silicon Epitaxial Planar Transistor
for low frequency power amplification and driver amplification
The transistor is subdivided into three group, Q, R and S according to its DC current gain.
On special request, these transistors can be manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage
Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
2SA683 2SA684 2SA683 2SA684
Symbol -VCBO
-VCEO -VEBO
-IC -ICP PC Tj Tstg
1. Emitter 2. Collector 3. Base TO-92 Plastic Package
Value
Unit
30 40
V
25 30
V
5
V
1
A
1.
2SA684 Datasheet
