Semtech Corporation BAV23
Silicon Epitaxial Planar Diodes
ABSOLUTE MAXIMUM RATINGS
(Ta = 25 OC) Parameter Maximum Repetitive Reverse Voltage Reverse Voltage Forward Current Repetitive Peak Forward Current Non-repetitive Peak Forward Surge Current Power Dissipation at t = 10 ms at t = 100 μs at t = 1 μs Thermal Resistance Junction to Ambient Air Operating Junction and Storage Temperature Range Symbol VRRM VR IF(AV) IFRM IFSM Ptot RθJA Tj, Tstg Value 250 200 400 625 1.7 3 9 350 357 - 65 to + 150 Unit V V mA mA A mW OC/W OC Characteristics at Ta = 25 O Parameter Reverse Breakdown Voltage at IR = 100 µA Forward Voltage at IF = 100 mA at IF = 200 mA Reverse Current at VR = 200 V, Tj = 25 OC at VR = 200 V, Tj = 150 OC Total Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time at IF = IR = 30 mA, Irr = 0.1 X IR, RL = 100 Ω Symbol Min. Max. Unit V(BR)R 250 - V VF - 1 V - 1.25 IR - 100 nA - 100 µA Ctot - 5 pF trr - 50 ns SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev:01 BAV23 / SE / CC / CA SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev:01